| Parameters(19) | Default | Remark |
| Rs |
1m |
Source packaging resistance |
| RG |
3.2 |
Internal Gate Resistance [Ohm] |
| M |
0.5 |
Cds Junction Capacitance Grading Coefficient |
| VJ |
1 |
Cds Junction Capacitance pn potential |
| Rd |
1m |
On state Drain-Source Resistance becuase of packaging, lead and epi layers |
| BVdss |
40 |
Breakdown voltage[V] |
| Vto |
3.6 |
Gate-source Threshold voltage |
| TRR |
50n |
Reverse Recovery Time [s] |
| QRR |
100n |
Reverse Recovered Charge |
| N |
1 |
Emission Coefficient |
| Is |
2e-8 |
Saturation Current |
| IF |
20 |
Forward current before Reverse Recovery |
| DIFDT |
100e6 |
Reverse Recovery slope of turn off current |
| KP |
46 |
Transconductance |
| CGS |
5nF |
Constant Gate Source capacitance |
| CgdMin |
100p |
Minimum Cgd |
| CGDMax |
250pF |
Maximum Cgd |
| CDS |
750pF |
Junction Capacitance |
| A |
0.5 |
Cds miller capacitance slope |
